Description
Introduction to HMAA8GL7CPR4N-XN Hynix Memory
The “Introduction to HMAA8GL7CPR4N-XN Hynix Memory” section would introduce the reader to the Hynix memory module with the product code HMAA8GL7CPR4N-XN. It provides a brief overview of the memory module and highlights its key features. The purpose of this section is to give the reader a general understanding of what the HMAA8GL7CPR4N-XN Hynix Memory is and what it is used for.
64GB Capacity and 288-Pin Form Factor
The “64GB Capacity and 288-Pin Form Factor” section describes the capacity and physical characteristics of the HMAA8GL7CPR4N-XN Hynix Memory.
The capacity of this memory module is 64GB, which means it can store 64 gigabytes of data. This large capacity makes it suitable for use in high-performance computing systems that require a lot of memory.
The 288-pin form factor refers to the physical layout of the memory module. The 288 pins are used to connect the module to the motherboard and provide the data and power connections needed to operate the memory. The 288-pin form factor is commonly used for DDR4 memory modules and is the standard form factor for RDIMM memory modules, of which the HMAA8GL7CPR4N-XN is one.
DDR4 SDRAM Technology
The “DDR4 SDRAM Technology” section of the HMAA8GL7CPR4N-XN Hynix Memory refers to the type of memory technology used in the module. DDR4 stands for “Double Data Rate 4th Generation” and is the latest generation of SDRAM (Synchronous Dynamic Random Access Memory) technology.
DDR4 SDRAM provides faster speeds, higher density, and lower power consumption compared to previous generations of DDR memory. The HMAA8GL7CPR4N-XN Hynix Memory operates at a clock speed of 3200MHz, which is a measure of how many cycles per second the memory can perform. This fast clock speed, combined with the high-bandwidth PC4-25600 interface, provides fast and efficient memory access to the system.
The use of DDR4 SDRAM technology in the HMAA8GL7CPR4N-XN Hynix Memory ensures high-performance memory operations and supports the demanding requirements of modern computing systems.
ECC Registered and Quad Rank Design
The “ECC Registered and Quad Rank Design” section of the HMAA8GL7CPR4N-XN Hynix Memory refers to the error correction and memory organization features of the module.
ECC Registered refers to the use of Error Correction Code (ECC) technology in the memory module. ECC is a method of detecting and correcting errors in the data stored in the memory. This is especially important in mission-critical applications where data integrity is a concern.
Quad Rank X4 design refers to the organization of the memory chips on the module. The X4 design indicates that there are four memory ranks on the module, while the “Quad Rank” term refers to the use of four memory chips. This design provides a large memory capacity and supports high-performance memory access.
The combination of ECC Registered and Quad Rank X4 design in the HMAA8GL7CPR4N-XN Hynix Memory provides both data integrity and high-performance memory access. These features make the memory module suitable for use in demanding applications where reliability and performance are critical.
General Information
- Manufacturer: Sk Hynix
- Manufacturer Part Number: HMAA8GL7CPR4N-XN
- Product Name: 64GB DDR4 Sdram Memory Module
Technical Information
- Storage Capacity: 64GB
- Memory Technology: DDR4 Sdram
- Number Of Modules: 1 X 64GB
- Bus Speed: 3200mhz DDR4-25600/PC4-3200v
- Data Integrity Check: Ecc
- Signal Processing: Registered
- Cas Latency Timings: Cl22
- Rank Features: 4rx4
