Description
Product overview for the Samsung M393A8G40MB2-CVFBQ
In the ever-evolving landscape of technology, server memory plays a crucial role in ensuring the optimal performance and reliability of servers. Among the plethora of options available, the Samsung M393A8G40MB2-CVFBQ 64GB DDR4 memory module stands out for its impressive specifications and features. In this comprehensive review, we will delve into the intricacies of this memory module, exploring its design, performance, and suitability for server applications.
DDR4 Technology Overview
Before we delve into the specifics of the Samsung M393A8G40MB2-CVFBQ, it’s essential to understand the underlying technology – DDR4 (Double Data Rate 4). DDR4 is the fourth generation of DDR RAM, succeeding DDR3. It brings several improvements, including higher data transfer rates, lower power consumption, and increased memory module density.
Higher Data Transfer Rates
DDR4 operates at higher data transfer rates compared to its predecessor, DDR3. This translates to improved overall system performance and responsiveness.
Lower Power Consumption
One of the significant advantages of DDR4 is its lower power consumption. This is achieved through various enhancements, such as a more energy-efficient voltage specification.
Increased Module Density
DDR4 allows for higher module densities, enabling the creation of memory modules with larger capacities. This is particularly advantageous for servers and other applications that demand substantial memory resources.
Samsung M393A8G40MB2-CVFBQ Overview
Now, let’s shift our focus to the Samsung M393A8G40MB2-CVFBQ 64GB DDR4 memory module and break down its specifications.
Capacity: 64GB (1X64GB)
The Samsung M393A8G40MB2-CVFBQ boasts an impressive capacity of 64 gigabytes, providing a substantial amount of memory for demanding server applications.
Speed: 2933MHz (PC4-23400)
The memory module operates at a speed of 2933 megahertz, denoted as PC4-23400. This high data transfer rate contributes to swift data access and efficient multitasking.
CAS Latency: CL21
The CAS latency, or CL, is a critical parameter indicating the delay between the memory controller sending a request and the actual response. A CL21 latency ensures responsive performance in various server scenarios.
ECC (Error-Correcting Code)
The memory module incorporates ECC technology, crucial for detecting and correcting errors in data. This feature is particularly vital in server environments where data integrity is paramount.
Registered and Dual Rank X4
The module is classified as both Registered and Dual Rank X4. Registered memory provides additional buffering, enhancing stability and reliability. Dual Rank X4 signifies the organization of memory chips on the module, contributing to efficient data access.
Voltage: 1.2V
Operating at a low voltage of 1.2 volts, the Samsung M393A8G40MB2-CVFBQ promotes energy efficiency, aligning with modern standards for environmentally conscious computing.
288-pin RDIMM (Registered Dual Inline Memory Module)
The 288-pin RDIMM form factor ensures compatibility with server systems designed to accommodate this specific memory module type.
Performance Evaluation
Now that we’ve covered the technical specifications, let’s assess the performance of the Samsung M393A8G40MB2-CVFBQ in real-world scenarios.
Server Workloads
The primary target for this memory module is server environments. Its substantial 64GB capacity is well-suited for handling resource-intensive tasks such as virtualization, database management, and complex computational workloads.
Multitasking Capabilities
The 2933MHz data transfer rate, coupled with the low CAS latency of CL21, ensures smooth multitasking capabilities. This is particularly advantageous in scenarios where multiple processes run concurrently, such as in a virtualized server environment.
Data Integrity and Reliability
The incorporation of ECC technology is a standout feature, providing an additional layer of data integrity. Error detection and correction are crucial in server applications where data accuracy is non-negotiable.
Energy Efficiency
The low operating voltage of 1.2 volts contributes to energy efficiency. In large-scale server deployments, this not only reduces power consumption but also helps manage heat dissipation, contributing to a more sustainable and reliable server infrastructure.
Compatibility and Scalability
The 288-pin RDIMM form factor ensures compatibility with a wide range of server systems. Additionally, the module’s 64GB capacity allows for scalability, accommodating the growing memory needs of evolving server workloads.
General Information about the Samsung M393A8G40MB2-CVFBQ
- Manufacturer: Samsung
- Model Number or SKU# M393A8G40MB2-CVFBQ
- Type: Memory (RAM)
- RAM Type: PC4-23400
- Product Name: 64GB DDR4 SDRAM Memory Module
Technical Information for the 64GB DDR4 RAM
- Storage Capacity: 64GB
- Memory Technology: DDR4 SDRAM
- Number Of Modules: 1 X 64GB
- Bus Speed: 2933MHz DDR4-23400/PC4-2933V
- Data Integrity Check: ECC
- Signal Processing: Registered
- Cas Latency Timings: Cl21
- Rank Features: 2rx4
Compatibility of 64GB PC4-23400 Memory Module
- Poweredge R640
- Poweredge R740
- Poweredge R940
- Poweredge R740xd
- Poweredge C6420
- Poweredge T640
- Poweredge Fc640
- Poweredge M640
- Poweredge M640 Vrtx
- Poweredge C4140
- Poweredge R840
- Poweredge Mx740c
- Poweredge Mx840c
In short, the Samsung M393A8G40MB2-CVFBQ 64GB DDR4 memory module emerges as a compelling choice for server deployments. Its impressive capacity, high data transfer rate, ECC support, and energy-efficient operation make it well-suited for a variety of server applications. As technology continues to advance, having reliable and high-performance server memory becomes increasingly critical, and the Samsung M393A8G40MB2-CVFBQ proves itself as a reliable contender in this space. Whether you are upgrading existing server infrastructure or building a new server system, this DDR4 memory module warrants serious consideration for its blend of capacity, speed, and reliability.
